Optical lithography and e-beam lithography have been widely used in the formation of microelectronic devices, and these two technologies combined with ion implantation have been already applied to fabricate FET. Hayden et al. [37] utilized optical lithography and ion implantation to produce an n-type/intrinsic/n-type junction in the silicon nanowires. With the n-doped substrate under the silicon oxide layer as the global back gate, metal oxide semiconductor FET was finished by ion implantation and optical lithography (details in Figure 8). Colli et al. [2] implanted P or B ions into

silicon nanowires that have a thick oxide shell surrounding the silicon core and then evaporated Ni on the silicon nanowires as the electrode through e-beam lithography. Throughout 3-Methyladenine order the entire

experimental process, it is the crucial step to choose the appropriate implantation energy. It must be ensured that the dopants were stopped within the core of nanowires. The incident ion energy and implantation fluences may impact the quality of the FETs. Jang selleck chemical et al. [38] reported that the CNT-FET exhibited p-type behaviors after oxygen implantation at low doses and metallic behaviors at high doses. Zinc oxide nanowires have been widely applied in the fabrication of FETs; Liao et al. [39] utilized Ga+ ion implantation to improve the performance of nanowire-based FETs. The improvement of the performance is attributed to a reduced surface effect after ion implantation. There are many other semiconductors used to produce FET, but there is still little for doping through ion implantation. Figure 8 Preparation process of nanowire devices. (a–c) Schematic representation of the NWFET fabrication. (d) SEM micrograph of a nanowire device with top contacts. Reprinted with permission from Hayden click here et al. [37]. Optical properties Owing to the desirable optical properties of semiconductor

nanomaterials, many nanomaterials were used to fabricate light-emitting diodes [40–42] and nanowire lasers [43]. However, there are still some imperfections of these nanodevices; doping with optically activated impurities (like transition metals and rare earth elements) through ion implantation may improve the properties of these nanodevices [44]. Transition metals (TM) are interesting doping elements for semiconductor nanowires because of its enormous optical influences to semiconductor nanowires. Doping with rare earth elements is another significant research direction, as rare earth elements have a special outermost electron structure [45]. Silica nanowires are significant nanomaterials for integrated photonics and biosensing because silica nanowires are suitable hosts for optically active impurities, are chemically inert, and are excellently biocompatible. Elliman et al. [46] reported silica nanowire doping with erbium by ion implantation, and they found that PFT�� ic50 luminous intensity and lifetime have a very obvious enhancement.