We did not find any peak that corresponds to the diffraction from

We did not find any peak that corresponds to the diffraction from Cu2O (111) or Cu (111) which would be located at 36.4° and 43.3°, respectively [18]. The XRD results are consistent with the TEM results that a pure CuO has been grown successfully on top of ZnO NWs. Figure 3 XRD patterns of ZnO (black line) and ZnO/CuO (red line). The inset shows the XRD patterns of ZnO (black line) and ZnO/CuO (red line) between 2θ = 35.5° and 40.5°. Transmission and spectral photoresponse of the ZnO-CuO are shown in Figure  4. With the light coming from the ‘back’ of the sample as shown in the Erismodegib solubility dmso inset of Figure  1, the ITO/glass substrate acts

as a ‘low-pass filter’ and will allow the light with a wavelength above 350 nm to pass without absorption [21]. As can be seen in the figure, the transmission spectrum of ZnO/CuO CH (blue line) shows two abrupt drops, one at about 420 nm and the other at about 800 nm, which correspond to the band-edge absorption of ZnO and CuO, respectively. Also shown in the figure are the photoresponse spectra of ZnO/CuO CH under MK-8669 supplier different reverse biases. We can identify two features located at 424 and 800 nm in the spectra. The huge response around 424 nm is below the typical band gap of ZnO. It could be due to the narrowing of the band gap of ZnO as a result of tensile stress in the coaxial structure

[22], which is consistent with our XRD and TEM results. Another response around 800 nm can be attributed to the photoresponse of CuO [23]. It is much smaller than that of the main peak at 424 nm because the CuO film is thin. We note that the optical responsivity of the devices is bias sensitive. The responsivity of the sample at 424 nm increases from 0.4 to 3.5 A W−1 when the reverse bias increases from 1 to 3 V. Figure 4 Transmission spectrum of ZnO/CuO

CH and its photoresponse spectrum at different reverse biases. The inset shows the photoresponse of ZnO NWs for comparison. The I-V curves of PR-inserted ZnO NWs/CuO with and without light illumination are shown in Figure  5. The inset shows that the I-V curves for the Ag-CuO film (black line) and ITO-ZnO NWs (blue line) are both linear, indicating the contacts are ohmic [24–26]. Hence, second the characteristic rectifying behavior is due to the ZnO/CuO CH p-n junction [26]. As can be seen in the figure, the leakage current is 12.6 μA at a reverse bias of −3 V, and it increases to 770 μA under light illumination, which is an increase of about 60-fold. As there is a large on/off ratio and the photoresponse is centered at around 424 nm, the experimental results suggest that the PR-inserted ZnO/CuO CH can be used as a good narrow-band blue light detector [27]. Figure 5 I – V characteristic curves of the ZnO/CuO CH with PR. In the dark (black line) and under light (424 nm) illumination (red line). The inset shows the I-V curves of the Ag-CuO film (black line) and ITO-ZnO NWs (blue line).

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